报 告 人：陈景升，新加坡国立大学 (National University of Singapore) 教授
报告题目：Spin Orbit Torque Efficiency Enhancements with Antiferromagnet and MoS2 Layer
内容简介：In the present paper, we will report the enhancements of the spin orbit torque efficiency by the antiferromagnet and MoS2 layer, respectively. We find that this unconventional magnetic structure is responsible for a much larger SOT efficiency up to 0.60±0.04, comparing to 0.083±0.002 for the polycrystalline face-centered-cubic IrMn. Furthermore, we reveal that the magnetic structure of L10-IrMn induces a large isotropic bulk contribution to the SOT efficiency and an anisotropic interfacial contribution of comparable magnitude, where the latter depends strongly on the electric current direction in the film plane. SOT efficiency in Pt/[Co/Ni] multilayer is significantly increased from 0.029 to 0.51 by inserting a MoS2 underlayer. First principles calculation and X-ray absorption spectrum further reveal that MoS2 result in the modification of the orbital hybridization at the Pt/Co interface, which explains the enhancement of PMA.
报告人简介：Dr Jingsheng Chen is an Associate Professor in Department of Materials Science and Engineering. He obtained his Ph.D degree in 1999 in Lanzhou University, China and joined NUS in December 2007. During 2001-2007 he worked at the Data Storage Institute as a research scientist. He has authored/co-authored more than 240 refereed journal papers, 3 book chapters, holds over ten patents and has made more than 50 invited presentations in the international conferences. His research work has obtained more than 4000 non-self-citations with H index of 35. His research interest includes magnetic and oxide based non-volatile memories, spintronics, ferroelectric tunnel junction, strongly correlated oxide materials. He secured more than S$15 million research grants from government and around US$ 800k from Seagate Technology and more than S$ 1 million from Globalfoundries.